Investigation of Limitations in the Detection of Antibody + Antigen Complexes Using the Silicon-on-Insulator Field-Effect Transistor Biosensor

The SOI-FET biosensor (silicon-on-insulator field-effect transistor) for virus detection is a promising device in the fields of medicine, virology, biotechnology, and the environment. However, the applications of modern biosensors face numerous problems and require improvement. Some of these problems can be attributed to sensor design, while others can be attributed to technological limitations. The aim of this work is to conduct a theoretical investigation of the “antibody + antigen” complex (AB + AG) detection processes of a SOI-FET biosensor, which may also solve some of the aforementioned problems. Our investigation concentrates on the analysis of the probability of AB + AG complex detection and evaluation. Poisson probability density distribution was used to estimate the probability of the adsorption of the target molecules on the biosensor’s surface and, consequently, to obtain correct detection results. Many implicit and unexpected causes of error detection have been identified for AB + AG complexes using SOI-FET biosensors. We showed that accuracy and time of detection depend on the number of SOI-FET biosensors on a crystal.